Abstract
An accelerated L 1 0 ordering process was observed in FePt thin films deposited directly on HF-cleaned Si substrates at low annealing temperatures as compared with those deposited on nature-oxidized Si substrates, which results from an interface reaction that forms PtSi between the FePt film and the Si substrate. The L 1 0 ordered FePt thin films prepared after 360 °C annealing show a large coercivity of H c = 8.9 kOe and an excellent stability against thermal annealing.
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