Abstract
The influence of ion beam irradiation on structures, mainly of surface and interfaces, of a bilayer system, Ag/Co, deposited sequentially on Si(0 0 1) substrate by dc magnetron sputtering, is studied by X-ray reflectivity measurements. Films are irradiated by rastering with 150 keV Ar 2+ ion beam at fluences 1 × 10 14 and 5 × 10 14 ions/cm 2 and X-ray reflectivity data are collected in specular geometry. Experimental data were fitted with a non-linear least square fitting program and from that film thickness, surface and interface roughness and electron density profile along the growth direction are found out. It is observed that for both ion fluences the thickness of both films decreased and electron densities increased. The interface has become sharper than that of the as grown sample for lower fluence and Ag is found to be in Co layer at higher fluence, which could have happened due to ballistic effect. The thickness reduction and electron density increase indicate rearrangement of the atoms in close packed structure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
