Abstract

Field-Effect Passivation The implementation of Ga2O3 thin film effectively passivates the CZTS/TiO2 heterojunction by blocking holes away from the buffer layer and acts as an electron-selective contact. This hole-blocking layer reduces interface recombination evident from significant photoluminescence quenching. More information can be found in article number 2200001 by Mukesh Kumar and co-workers.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.