Abstract
A Ti/VOx/ITO memristor prepared at room temperature presents low switching voltages (set/reset voltages ~ −6 mV/190 mV) as well as good resistive switching characteristics including acceptable ON/OFF ratio (~ 10) and long data retention (>104 s). Such ultralow switching voltages mainly result from appropriate interface engineering combined with rational material design. Due to Ti’s high oxygen-gettering capability, its contact with VOx leads to formation of a TiOx interlayer with numerous oxygen vacancies (VO2+) near the interface even at room temperature. This interfacial VO2+ facilitates oxygen ions (O2-) migration by enlarging the available free space and weakening the local oxygen-cation bonds, thus resulting in the low switching voltages. Moreover, the graded O2- distribution in the TiOx interlayer induces a built-in electric field (Ebuilt-in), which has the same direction to the external electric field generated by the set voltage. This Ebuilt-in accelerates the O2- migration and thus leads to the ultralow set voltage. The resistive switching mechanism is revealed to be based on formation and collapse of the Schottky barrier caused by the O2- drift in the TiOx interlayer. The Boolean logic functions including ‘NOT’, ‘AND’, ‘OR’, ‘NAND’ and ‘NOR’ are demoed by using a single memristor, showing a great potential for in-memory computing.
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