Abstract
Systems consisting of sequential layers of hard and soft carbon films were deposited on Si substrates by sputtering and plasma-assisted chemical vapor deposition (PACVD). A full characterization of the film and of the interfaces is considered crucial to obtain a correlation between the mechanical properties and the chemical composition and architecture of the films. In this work, the Auger-electron spectroscopy (AES) depth profiling technique was applied to study the chemical composition of the film and of the different interfaces (hard/soft layers; film/substrate). In particular, we focused on an optimization of the depth resolution parameters. A strong period–thickness effect on the film/substrate interface width was observed. Sputtering-induced roughness was also evaluated to check its effect on the interface width and on its morphological changes.
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