Abstract
The overall stress state in γ-channels of γ/ γ′-microstructures has three components: misfit stresses (due to γ/ γ′-misfit), dislocation stress fields and the external stress. In the present study glide and climb forces on γ-channel dislocations (from one slip system a 0/2[01 1 ̄ ](111) ) are studied calculating Peach–Koehler forces for γ/ γ′-interface dislocations exposed to the overall stress state. A thermo-elastic finite element calculation of misfit stresses is performed and the results are used as one input into a simplified discrete dislocation model (DDM). The influence of γ′-volume fraction and dislocation density in the γ-channels is explicitly considered. The calculations were motivated by previous mechanical and microstructural investigations in which elementary dislocation processes were identified by transmission electron microscropy as part of the mechanism of high temperature and low stress creep. The results help to interpret phenomenological concepts (like build up of back stress) and rationalize microstructural findings (like dislocation network spacings).
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