Abstract

The laser processing method for the fabrication of IBC-HJ solar cells has been reported in the past but the issue of laser-induced defects is not well addressed. This study has focused on the effects of nanosecond laser patterning of amorphous silicon-based passivation layers in an IBC-HJ solar cell structure. The effect of laser processing parameters on laser-induced defects was characterized by micro photoluminescence, carrier lifetime measurements and surface morphology by Scanning Electron Microscope. High carrier lifetime and high photoluminescence under optimum nanosecond pulsed laser processing conditions were achieved, indicating the minimum effect on surface passivation.

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