Abstract
Insulated gate bipolar transistor (IGBT) modules, which can fail to stable short-circuit mode, have major applications in electricity network-related fields. Sn-3.5Ag solder joints and sintered Ag joints for the die attachment and Mo, Cu, Sn-3.5Ag, Al, and Ag foils for the top side insert (TSI) material in press pack like single IGBT samples have been investigated using overcurrent and current passage tests. The results reveal that Sn-3.5Ag solder joints in combination with Sn-3.5Ag, Al, or Ag foils can be employed to achieve stable short-circuit failure mode, where the best results are achieved with Ag foils. This can be attributed to the formation of conductive networks/channels through the failed IGBT and good alignment between the residual TSI material and the failed IGBT.
Highlights
INSULATED gate bipolar transistor (IGBT) modules which can achieve stable short circuit failure mode (SCFM) in the event of device destruction are important in electricity network related fields
When Mo is directly put on the IGBT, the SCFM obtained from the reaction between Mo and molten Si is unstable
Further experimentation is needed to investigate the reported SCFM of the Press-Pack IGBT module (PPIM) based on packaging technology of the press pack thyristor modules [3]
Summary
INSULATED gate bipolar transistor (IGBT) modules which can achieve stable short circuit failure mode (SCFM) in the event of device destruction are important in electricity network related fields. They have intrinsic importance in systems which are installed remotely, or at places which are not easy to access or where the cost of unscheduled maintenance is prohibitively high [1]. The first one; Press-Pack IGBT module (PPIM) by Westcode [2,3] and the second; StakPak IGBT module (SPIM) by ABB [4,5]. Both IGBT modules require very flat and dimensionally accurate components, and their manufacturing process is
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