Abstract
Starting from a quantum-kinetic Boltzmann equation, the scattering rate for interband transition processes in GaAs is calculated numerically, taking into account a realistic band structure with corresponding Bloch wave functions. We compare with approximate solutions for this scattering rate such as the Keldysh or the Bethe formula, which are frequently used in simulations for high-field electron transport in solids. Based on the parameter-free numerical results, a fit formula for the impact ionization rate in GaAs is derived.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
