Abstract
In this Perspective article, we present recent developments on interaction effects on the carrier transport properties of one-dimensional (1D) semiconductor quantum wires fabricated using the GaAs/AlGaAs system, particularly the emergence of the long predicted fractional quantization of conductance in the absence of a magnetic field. Over three decades ago, it was shown that transport through a 1D system leads to integer quantized conductance given by N·2e2/h, where N is the number of allowed energy levels (N = 1, 2, 3, …). Recent experiments have shown that a weaker confinement potential and low carrier concentration provide a testbed for electrons strongly interacting. The consequence leads to a reconfiguration of the electron distribution into a zigzag assembly which, unexpectedly, was found to exhibit quantization of conductance predominantly at 1/6, 2/5, 1/4, and 1/2 in units of e2/h. These fractional states may appear similar to the fractional states seen in the Fractional Quantum Hall Effect; however, the system does not possess a filling factor and they differ in the nature of their physical causes. The states may have promise for the emergent topological quantum computing schemes as they are controllable by gate voltages with a distinct identity.
Highlights
The use of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices was pioneered by the IBM group who showed that the inversion layer of the device was twodimensional (2D) and found Landau levels resulting from magnetic quantization of the 2D density of states resulting in Shubnikov– de-Haas oscillations.[1]
The consequence leads to a reconfiguration of the electron distribution into a zigzag assembly which, unexpectedly, was found to exhibit quantization of conductance predominantly at 1/6, 2/5, 1/4, and 1/2 in units of e2/h. These fractional states may appear similar to the fractional states seen in the Fractional Quantum Hall Effect; the system does not possess a filling factor and they differ in the nature of their physical causes
The use of MOSFET devices was pioneered by the IBM group who showed that the inversion layer of the device was twodimensional (2D) and found Landau levels resulting from magnetic quantization of the 2D density of states resulting in Shubnikov– de-Haas oscillations.[1]
Summary
The use of MOSFET devices was pioneered by the IBM group who showed that the inversion layer of the device was twodimensional (2D) and found Landau levels resulting from magnetic quantization of the 2D density of states resulting in Shubnikov– de-Haas oscillations.[1]. In this Perspective article, we present recent developments on interaction effects on the carrier transport properties of one-dimensional (1D) semiconductor quantum wires fabricated using the GaAs/AlGaAs system, the emergence of the long predicted fractional quantization of conductance in the absence of a magnetic field.
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