Abstract

Experimental and theoretical investigations on the integer quantized Hall effect in gate-defined narrow Hall bars are presented. At low electron mobility the classical (high-temperature) Hall resistance line RH(B) cuts through the center of all Hall plateaus. In contrast, for our high-mobility samples the intersection point, at even filling factors ν=2, 4, …, is clearly shifted towards larger magnetic fields B. This asymmetry is in good agreement with predictions of the screening theory, i.e. taking Coulomb interaction into account. The observed effect is directly related to the formation of incompressible strips in the Hall bar. The spin-split plateau at ν=1 is found to be almost symmetric regardless of the mobility. We explain this within the so-called effective g-model.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.