Abstract
Density functional theory calculations are employed to gain a fundamental insight on the interaction of n-type dopants such as phosphorous and arsenic with oxygen interstitials and A-centers (vacancy-oxygen interstitial pairs) in silicon and germanium. We propose the formation of the phosphorous-vacancy-oxygen interstitial and arsenic-vacancy-oxygen interstitial cluster in both silicon and germanium.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
