Abstract
We extend the dressed-atom approach to treat the interaction of a laser field with a semiconductor system in which the interaction with the laser is incorporated through the renormalization of the semiconductor effective mass. The semiconductor is modeled via a simple parabolic two-band isotropic scheme in the k · p approximation. We compare the effects of the laser dressing on the intradonor transitions in doped GaAs–(Ga,Al)As quantum wells with those produced by an applied external magnetic field. It is shown that these effects may be comparable and therefore experimentally observable. Such approach allows the study of the effects of laser fields on a variety of phenomena in semiconductor systems for which the effective-mass approximation provides a good physical description.
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