Abstract
The kinetics of a low-temperature silicide formation have been investigated in experiments on the solid-phase interaction between Cr and amorphous Si (a-Si). For the Cr/plasma-enhanced chemical-vapor-deposited a-Si:H system, it was found that amorphous interlayer was formed at the interface at RT. The compositional ratio of Cr to Si in the amorphous interlayer formed at RT was found to be about 5%. On the other hand, for the Cr/sputtered a-Si system at RT, an interfacial amorphous layer with negligible thickness seemed to exist. From the experimental results and from the results previously reported, the kinetics of the low-temperature interaction were discussed and a new model of an internal-field-assisted interaction was proposed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
