Abstract
Intense short-wavelength photoluminescence (PL) observed at room temperature from thermal SiO2 films co-implanted with Si and C is reported. A flat Si profile was first implanted, followed by 1100 °C annealing for 60 min. C ions were subsequently used to be implanted into the same depth region. PL was observed from the as-implanted samples with and without annealing. The PL intensity increases with annealing temperature. Comparing the PL spectra and the PL dynamics of the C-implanted, annealed, Si-implanted (CIASI) SiO2 films with those from Si- and C-implanted SiO2 films suggests that the interaction of Si and C in SiO2 films plays an important role in the luminescence in CIASI SiO2 films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
