Abstract
Integration of a self-assembled porous silica film layered with a cap film was carried out for low-k/Cu damascene structures. The dielectric constant of the porous silica in the layered damascene structure was extracted, and the process-induced damage layer was characterized. Due to the integration process of low-k/Cu damascene, the hydrophobic methyl group was decomposed by plasma etching and subsequent barrier and seed sputtering as well as by Cu electroplating, resulting in the formation of hydrophilic silanol groups. The lateral dimension of the process-induced damaged layer and its effective dielectric constant were found to be 35 nm and 10, respectively.
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