Integration of RF inductors and filters on mesoporous silicon isolation layers

Abstract

AbstractIn this paper, we present electrochemical etching conditions to obtain thick mesoporous silicon electrical insulating layers for RF applications from high resistivity substrates (30–50 Ω cm). We present the realization and the characterization of spiral inductors on thick mesoporous silicon layers. Indeed, PSi layers reduce significantly the resistive and capacitive losses of the substrate, so, quality factor and resonant frequencies are improved for integrated inductors. In complement, we develop the integration of such devices in notch filters and we show the first measurement results on 100 µm thick mesoporous silicon layers.