Integration of high dielectric Ba 0.5Sr 0.5TiO 3 films into amorphous TaSiN barrier layer structures

Abstract

The high- k dielectric material (Ba,Sr)TiO 3 has been intensively investigated for possible applications in dynamic random access memory circuits. During the BST deposition process in O 2 ambient, typically at 650°C, the diffusion of oxygen through the bottom electrode into the poly Si plug must be prevented. Amorphous TaSiN films are excellent candidates as oxygen barrier layers. Ba 0.5Sr 0.5TiO 3 (BST) films with thickness of 100 nm were deposited on the electrode structure SiO 2/TaSiN/Pt. The sol–gel method was used to grow the BST films. The barrier effect for oxygen diffusion is studied in TaSiN layers with thickness of 50 nm, which were deposited by a reactive sputter process. X-ray photoemission spectroscopy results confirm that this amorphous material is a suitable barrier against oxygen diffusion at 650°C. The BST films, deposited at 650°C and post-annealed at 650°C show a dielectric constant of 100 at 100 kHz and a dissipation factor of less than 5%.