Abstract
A new wavelength-division photosensor using AlGaAs on Si grown by MOCVD has been developed. The photosensor is made up of a top sensor consisting of an AlGaAs photodiode and a bottom sensor consisting of an Si photodiode. The normalized difference of output currents of the top and bottom sensors has a good linear relationship with the wavelength of incident monochromatic light from 600 to 880 nm. The sensitivity and operating wavelength region of the sensor can easily be varied by changing the thickness and the Al content of the top sensor.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
