Abstract
ABSTRACTThe processing of titanium silicide in a multichamber processing system is described. Three processes are included: wafer cleaning, Ti deposition, and annealing. The results are compared to wafers processed in a conventional way with exposure to ambient air between Ti deposition and the annealing step. TEM, RBS and sheet resistance measurements indicate that the films processed without exposure to ambient air have thicker and purer TiN layers as compared to the films with air exposure. Furthermore, integration allows for a wider processing window for the first annealing step. The use of reactive cleaning chemistry prior to Ti deposition results in a smooth silicon surface and therefore uniform silicidation as compared to inert cleaning technology, where redeposit of etched material occurs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
