Abstract
A new high density integrated-optical switch design using electrically controlled diffraction gratings formed in the intersection of crossing waveguides is proposed and demonstrated. The gratings are formed, in one implementation, by implanting donor atoms in a periodic pattern. Free carriers from the implanted ions modify the index of refraction resulting in Bragg diffraction between the waveguides. Depletion of the free carriers using a reverse bias voltage switches off the diffraction. High speed switch arrays of 100×100 elements on a single substrate may be feasible. Fabrication and demonstration of a low efficiency proof-of-concept switch array in GaAs for use at 1.55 μm are reported. Other designs capable of much higher diffraction efficiencies are described.
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