Abstract
AbstractInfluence of the thermal shield on temperature zones, microdefect formation and occurrence of diameter distortion in Cz dislocation‐free silicon single crystal is analyzed. Results of integrated modeling of thermal field and distributions of intrinsic point defects (IPD) in the ingot shoulder and across the cylindrical body of grown silicon crystal are discussed. An application of the pre sent model of defect formation to rapid thermal annealing (RTA) of silicon wafers is shown. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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