Abstract
Novel InGaP/GaAs co-integrated structures consisting of a heterojunction bipolar transistor and a field effect transistor are fabricated and demonstrated. For the HBT, the confinement effect for holes is increased and the potential spike at emitter-base (E-B) heterojunction is reduced significantly owing to the presence of a /spl delta/-doped sheet at the InGaP/GaAs junction. High current gain and low offset voltage are achieved. On the other hand, for a FET, an undoped InGaP gate layer is used to increase gate breakdown voltage, and a thin and heavy-doped GaAs channel is shown to enhance current drivability, transconductance, and linearity. For this structure, a wide gate voltage range larger than 3 V with the transconductance larger 150 mS/mm is obtained.
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