Abstract
Neuromorphic computing has gained a considerable research interest due to its potential in realizing highly efficient parallel computations. However, the existing neuromorphic architectures face various drawbacks. In this study, we present an integrate-and-fire (I&F) neuron using a Li-based electrochemical random access memory (Li-ECRAM) to achieve exceptional area efficiency and low-power neuromorphic computing. The proposed Li-ECRAM neuron employs a significantly reduced number of transistors when compared to other novel nonvolatile memory-based I&F neurons due to linear current integration characteristics and a high linear conductance response to the input current. As the integration-type Li-ECRAM is linear, it eliminates the requirement of a nonlinear compensating circuit. Therefore, a Li-ECRAM-based neuron has a simple structure comprising Li-ECRAM, reset transistor, inverter, and pulse generator. Furthermore, we also evaluate the operation speed and energy consumption of the proposed neuron, demonstrating the potential for high-speed and low-power operation. The proposed neuron can be applied in large-scale neuromorphic hardware applications due to the scalability and low energy consumption of Li-ECRAM.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.