Abstract
Hydrogenated silicon nitride and aluminum oxide passivation layers were deposited on boron doped floatzone silicon wafers that underwent a high temperature firing step. The passivation quality was monitored during thermal treatment at 75°C, 150°C and 250°C in darkness or under illumination. It was found that the passivation quality of the specific layers under investigation is far from stable in the course of time showing both deterioration and improvement features on a time scale of minutes to weeks. Furthermore, it was found that these changes occur in both darkness and under illumination, whereupon (stronger) illumination accelerates the changes. Via corona charging and capacitance voltage experiments it could be shown that the observed changes in the short term are mainly caused by changes in the chemical passivation quality.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
