In-Situ TEM Observation of Electromigration Damage by Surface or Interface Diffusion in Al and Al Alloy Films

Abstract

ABSTRACTIn-situ transmission electron microscope (TEM) electromigration damage (EMD) tests were performed on pure Al films which were thermally evaporated onto oxidized silicon wafers under different deposition conditions. Three different aluminum alloy films, Al-2wt%Cu, Al-8wt%Cu, and Al-2wt%Cu-lwt%Si were also examined. TEM images were recorded photographically and by a video camcorder. The sample stripes were stressed by a high DC current density (≈1.5 MA/cm2). A linear temperature ramp (5°C/min) was supplied by an external, computer controlled heater. The morphology of EMD-induced voids was found to be strongly dependent on microstructure. In small grain size Al stripes, EMD occurred by the formation of void “fingers” which propagated in an almost random manner. In large grain size Al and Al alloy stripes, the EMD-elongated voids propagated approximately parallel to each other and along the field direction. They were preceded with clearly identifiable local thinning. The thinned regions often had crystallographic edges. Contrary to the commonly held belief that EMD occurs only by a grain boundary diffusion mechanism, the present study clearly shows that surface or interface diffusion was the dominant, latter stage EMD failure mode in large grain size films.