In-situ monitoring of surface stoichiometry and growth kinetics study of GaN (0001) in MOVPE by spectroscopic ellipsometry

Abstract

GaN surface stoichiometry and growth kinetics in MOVPE were studied by in-situ spectroscopic ellipsometry. The effect of MOVPE conditions on both the surface stoichiometry and growth kinetics was investigated. The surface stoichiometry, such as N-rich, Ga-rich and Ga-excess surfaces, was monitored, and was drastically changed by the variation of the NH3 partial pressure. When the TMG supply was interrupted during the growth, the layer-by-layer decomposition/revaporation was observed in H2/NH3 ambient. The decomposition rate was measured as a function of the NH3 flow rate at the conventional epilayer growth temperatures (1050–1140 C). The decomposition rate was decreased with the increase in the N coverage on the GaN surface. it was found that the surface stoichiometry is a very important parameter for the control of the MOVPE growth kinetics.