Abstract
AbstractIn this work, in‐situ and real‐time Spectroscopic Ellipsometry (SE) has been implemented for the monitoring of the growth mechanisms of silicon oxide (SiOx) thin films onto flexible polymeric substrates. SiOx thin films are used as protective layers on flexible electronic devices in order to protect them from permeation of atmospheric O2 and H2O that induce corrosion effects to the active layers of these devices. The ellipsometric data were collected with an ultra‐fast Multiwavelength Spectroscopic Ellipsometer with 32 different wave lengths in the Vis‐fUV (3‐6.5 eV) energy range. The analysis of the real‐time SE measurements revealed significant information about the growth mechanism and showed different growth and deposition rates of SiOx onto Poly‐Ethylene Terephthalate, Poly‐Ethylene Naphthalate and organic‐inorganic substrates. Also, SE provided information about the time‐dependence of the optical parameters (energy gap, absorption peaks) and of SiOx stoichiometry and moreover about the effect of the substrate. Finally, the homogeneity of the SiOx thickness and optical properties gas been determined by mapping SE measurements. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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