Abstract
In this work the microstructure transition width from amorphous to microcrystalline silicon is discussed. It is shown that the width of the transition depends on the input silane concentration level and indirectly on the silane depletion level. The higher the input silane concentration and depletion, the wider the transition. Experimental results are then compared to an analytical model and good agreement is obtained with a semi-empirical approach that takes into account the effect of the silane density in the plasma on the electron density.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
