Abstract
We investigated a semiconductor heterostructure based on InGaAsP multi quantum wells using optical and electrical characterizations. The optical analysis allows us to probe the potential of such a structure in the scope of hot carrier solar cell device. Using different photoluminescence techniques, the quasi Fermi level splitting Δμ is estimated as a function of the excitation power. High value of Δμ is found as well as high carrier temperature. These results are compared to electrical measurements.
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