Abstract

New self-alignment techniques employing crystallographically defined emitter contact (CDC) technologies have been developed to fabricate InP/InGaAs heterojunction bipolar transistors (HBTs). The CDC technologies utilize the anisotropic wet etching characteristics of the InP and InGaAs dummy emitter layers, grown on the typical HBT layer structure. The shape of the emitter contact is determined by the crystallographically etched profiles of the InP and InGaAs dummy emitter layers. The fabricated HBTs demonstrated excellent device performance characteristics, indicating the effectiveness of the new self-alignment technology.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.