Abstract
The talk will address fabrication and characterization of InP-based two-dimensional (2D) photonic crystals (PhCs). The emphasis will be on material and processing issues. In particular, high aspect ratio etching of PhCs in the InP-based materials will be discussed, including feature-size dependent etching and its impact on the optical properties of PhCs. The physical basis for modification of carrier lifetimes of quantum wells in etched PhCs due to the so-called accumulated side-wall damage and methods to control carrier lifetimes relevant for emitter and switching applications will be discussed. Fundamental investigations of carrier transport across PhC structures will be reported and a new method to determine the etched side-wall surface potential will be demonstrated.
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