Abstract
The first InP-based monostable-bistable transition logic elements (MOBILEs), which have the advantages of multiple-input and multiple-functions, are demonstrated based on the monolithic integration of resonant-tunneling diodes and high electron mobility transistors. High peak current density, high peak-to-valley ratio, and high transconductance, which are required for high-performance MOBILEs, are demonstrated in the InP-based material system. A fabricated MOBILE, which has three-input gates with a 1:2:4 width ratio can perform weighted-sum threshold logic operation. The weighted-sum threshold logic opeation has a wide range of applications in new computing architectures such as neural networks and cellular automata.
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