Abstract
The interfacial electronic properties of diamondlike carbon on both n-InP and p-InP have been studied. These measurements include conductance and capacitance versus frequency or bias voltage for metal-insulator-semiconductor structures. Carbon was deposited by both ion-beam sputtering, and from an rf plasma. We find that interface electronic state densities range from 10 11 to 10 13 states/eV cm 2, depending on sample and preparation procedures. Normalized conductance versus frequency data show an unusual behavior, namely, two loss peaks having greatly differing voltage dependencies. We speculate on the physical origins of the two peaks.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
