Abstract
A new InP/InGaAs/InP DHBT structure with high carbon (C)-doped base was optimized and grown successfully by gas source molecular beam epitaxy (GSMBE) in this work. The C-doping concentration is 3×1019cm−3 with carrier mobility of 66.3cm2/Vs. Characteristics of C-doped InGaAs materials were investigated. High quality InP/InGaAs/InP DHBT structural materials were obtained. The InP/InGaAs/InP DHBT device with emitter area of 100×100μm2 was fabricated. The open base breakdown voltage (VBCEO) of 4.2V and current gain of 60 at VCE of 3.0V were achieved. All these results prove the material is suitable for DHBT device fabrication.
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