Abstract
We report on a novel InP-based 1.55 μm waveguide triple transit region photodiode (TTR-PD) structure for hybrid integration with passive optical silica waveguides. Using the beam propagation method, numerical analyses reveal that, for evanescent optical coupling between a passive silica waveguide and the InP-based waveguide TTR-PD, a coupling efficiency of about 90% can be obtained. In addition to that, an absorption of about 50% is simulated within a TTR-PD length of 30 µm. For fabricated TTR-PD chips, a polarization dependent loss (PDL) of less than 0.9 dB is achieved within the complete optical C-band. At the operational wavelength of 1.55 µm, a reasonable PDL of 0.73 dB is measured. The DC responsivity and the RF responsivity are achieved on the order of 0.52 A/W and 0.24 A/W, respectively. Further, a 3 dB bandwidth of 132 GHz is experimentally demonstrated and high output-power levels exceeding 0 dBm are obtained. Even at the 3 dB cut-off frequency, no saturation effects occur at a photocurrent of 15.5 mA and an RF output power of −4.6 dBm is achieved. In addition to the numerical and experimental achievements, we propose a scheme for a hybrid-integrated InP/silicon-based photonic millimeter wave transmitter.
Highlights
Research activities targeting millimeter wave applications, i.e., applications utilizing electromagnetic waves within the frequency range from 30 GHz to 300 GHz, have been revived in recent years
We presented a novel high-speed InP-based waveguide triple transit region photodiode (TTR-PD) structure for hybrid integration with passive optical silica waveguides, which are fundamental to form an optical beam-steering network
As an application for future 5G mobile systems, we proposed a scheme for a hybrid-integrated InP/silicon-based photonic millimeter wave transmitter, enabling photonic radio frequency (RF) beam forming and beam steering
Summary
Research activities targeting millimeter wave (mmW) applications, i.e., applications utilizing electromagnetic waves within the frequency range from 30 GHz to 300 GHz, have been revived in recent years. For future 5G mobile systems considered to make use of carrier frequencies in the mmW range, e.g., in the 60 GHz or the 70/80 GHz frequency band [4,6,7], photonic mmW transmitters that simultaneously enable high output-power levels, high operational bandwidth, and the opportunity for photonic beam forming, as well as beam steering, are necessitated. For this reason, a hybrid integration of different solid-state technologies on one platform becomes key for such high-performance devices. Adhesive wafer bonding can be applied introducing a thin (
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