Abstract
High-linearity modified uni-traveling carrier photodiodes on silicon-on-insulator with low AM-to-PM conversion factor are demonstrated. The devices deliver more than 2.5 dBm RF output power up to 40 GHz and have an output third order intercept point of 30 dBm at 20 GHz. Photodiode arrays exceed a saturation current-bandwidth-product of 630 mA · GHz and reach unsaturated RF output power levels of 10 dBm at 20 GHz.
Highlights
Heterogeneous integration of III-V material on a silicon photonics platform through wafer bonding has been demonstrated as a technique to integrate dissimilar materials without compromising their own properties [1]
We report on the design and experimental results including bandwidth, saturation current, output third order intercept point (IP3), and AM-to-PM conversion factor
It is based on a previously demonstrated normal-incidence InGaAsP/InP modified uni-traveling carrier (MUTC) photodiode (PD) that has achieved high saturation current and high linearity [5]
Summary
Heterogeneous integration of III-V material on a silicon photonics platform through wafer bonding has been demonstrated as a technique to integrate dissimilar materials without compromising their own properties [1]. While this approach is interesting for silicon transmitters [2], it leads to low dark current photodiodes with high efficiencies beyond 1.55 μm [3]. Based on the experimental results we believe that our devices are well suited for the use in heterogeneous silicon based photonic integrated circuits for microwave photonic applications [4]
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