Abstract
We demonstrate InP-based buried grating coupled surface-emitting distributed feedback (DFB) lasers designed to operate at a wavelength of 2004 nm. The laser structure consists of three InGaAsSb/InGaAs QWs, with a 5 $\mu \text{m}$ wide double-channel ridge waveguide. A second-order semiconductor/semiconductor grating is used for in-plane feedback and vertical out-coupling. The single longitudinal mode emission wavelength of the fabricated laser can be adjusted from 2002.7 to 2006 nm without any mode hopping. High side-mode suppression ratio (SMSR) of at least 35 dB is achieved under all injection currents and temperature conditions. The edge output power reaches 19 mW, measured in continuous-wave (CW) mode at 10 °C. Simultaneously, the output power of surface emission reaches 8 mW.
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