Abstract
Application of surface wave plasmas as an innovative technology for the destruction and removal of perfluorocompounds (PFC) emanating from semiconductor fabrication tools is demonstrated. The destruction of parts per thousand (ppt) concentrations of hexafluoroethane, C2F6, in oxygen and natural gas mixtures has been investigated as a function of microwave power in a low-pressure plasma reactor at 11.3 Torr. Effluent analysis included the determination of destruction and removal efficiencies (DRE) and product distributions by Fourier transform infrared spectroscopy and mass spectrometry. Destruction and removal efficiences of up to 99.6% for C2F6 were achieved using applied microwave powers from 500 to 2000 W, which corresponded to millisecond range residence times within the plasma. Product analysis indicated that hexafluoroethane conversion was limited to low molecular weight gases such as CO2, CO, COF2, H2O, and HF. CF4 was not produced as a plasma byproduct in any significant quantities. These investigations indicate that surface wave plasma destruction of perfluorocompounds at the point of use is a viable nonintrusive abatement technology for application to semiconductor manufacturing tools.
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