Abstract
The application of a carbon nanowall (CNW) via transfer is very demanding due to the unusual structure of vertically grown wall-shaped that easily collapses. In addition, direct growth on a device cannot obtain a precision-patterned shape because of the temperature limit of the photoresist (PR). Therefore, in this paper, we demonstrate a new CNW surface micromachining technology capable of direct growth. In order to reduce unexpected damage caused by chemical etching, a physical force was used to etch with the adhesive properties of CNWs that have low adhesion to silicon wafer. To prevent compositing with PR, the CNW was surface modified using oxygen plasma. Since there is a risk of surface-modified CNW (SMCNW) collapse in an ultrasonic treatment, which is a physical force, the CNW was coated with PR. After etching the SMCNW grown on PR uncoated area, PR was lifted off using an acetone solution. The effect on the SMCNW by the lift-off process was investigated. The surface, chemical, and structural properties of PR-removed SMCNW and pristine-SMCNW were compared and showed a minimal difference. Therefore, the CNW surface micromachining technique was considered successful.
Highlights
Graphite-related materials, such as graphene, carbon nanotubes (CNTs), and carbon nanowalls (CNWs) have continuously attracted interest in many fields [1,2,3,4,5,6,7,8,9,10]
Using the fact that CNW has low adhesion with Si wafer and is dissociated even when small physical forces are applied; an interlayer (Ag/SiO2) that enhances the adhesion between CNW and its under layer was deposited on the desired area
Since the non-polar PR and CNW are strongly bonded to each other, the CNW is surface-modified using oxygen plasma to attach functional groups and change its polarity
Summary
Graphite-related materials, such as graphene, carbon nanotubes (CNTs), and carbon nanowalls (CNWs) have continuously attracted interest in many fields [1,2,3,4,5,6,7,8,9,10]. At a relatively low temperature, compared to other graphite-related materials, a catalyst-free CNW is grown using various chemical vapor deposition (CVD) techniques or a sputtering system [15,16,17,18,19]. With regard to the growth of graphite-related materials through the CVD method, which requires a high temperature, directly growing on a desired area in the photolithography process from the photoresist (PR) temperature poses a limitation. When a non-polar CNW is coated with a non-polar PR, the two are very strongly attracted to each other, and the PR is not completely removed in the development process after exposure To resolve this problem, the CNW was surface modified under oxygen (O2) plasma to lower the strong adhesion between the PR and the CNW by a surface polarity change. It was confirmed whether the CNW remained in the area that had been removed through sonication
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