Abstract
Sol-gel TiO2 was synthesized and used as a gate dielectric for oxide thin-film transistors (TFTs). A hybrid gate insulator composed of sol-gel TiO2/thermally-grown SiO2 was applied to the inkjet-printed zinc-tin oxide (ZTO) TFTs for the first time. The electrical properties of an inkjet-printed ZTO TFT with a hybrid gate insulator show a mobility of 0.17 cm2/Vs, an on-to-off current ratio of 5 × 104, a subthreshold slope of 0.8 V/dec, and a threshold voltage of 0.6 V. The hybrid gate insulator for the inkjet-printed ZTO TFT shows a much improved operating voltage and subthreshold slope and a lower mobility compared to the SiO2 gate insulator.
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