Abstract
Injection type electroluminescence in the N-ion implanted ZnSe diode has been observed. The red band can be attributed to the selenium vacancies and the green band to the zinc vacancies or their complex. The anomalous edge emission intensity enhancement can be ascribed to the combined effect from radiative recombinations related to the nitrogen substituted for selenium sites and the intrinsic edge emission. The magnitude of this effect suggests a very efficient injection in the diode.
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