Abstract
Quadruple mass spectrometer and voltage–current (V–I) probe were used to in-situ process diagnostics during deposition of silicon thin films, especially the phase of initial transient status (ITS). The silane concentration variation in plasma region (Cp) was measured in real time, the transient depletion of silane at the beginning of discharge was observed in traditional gas mixing method and pre-hydrogen method. Meantime the electrical parameters were monitored with V–I probe, the fluctuation of discharge voltage and the current over time in the stage of the ITS were given. The relationship between electrical parameters and Cp was analyzed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
