Abstract
Inhomogeneous Model for the Investigation of the Optical Properties of the A-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy
Highlights
The zinc oxide (ZnO) is a semiconductor II-IV investigated since several years, that is why many physical properties of the ZnO in large number are already known [1,2,3,4,5]
From 3.275 eV to 3.375 eV representing the range of transparency zone, one observed that the inhomogeneous model used plots the whole reflectivity curve obtained experimentally by the authors [8]. One can explain this result by the fact that, the inhomogeneous model takes accounts the optical properties when the frequencies (ω) are lower than the resonance frequency (ω0) exactly like the simple Gaussian distribution used by authors [9]
Unless the other models [28, 33], which are limited on the investigation of the c-plane oriented ZnO, the inhomogeneous model, cplane oriented ZnO, made it possible to investigate the structure of the a-plane oriented ZnO and one has plotted in the same time three excitons A, B and C something that one did not find in the literature with the other models unless the model presented recently by the authors [9]
Summary
The zinc oxide (ZnO) is a semiconductor II-IV investigated since several years, that is why many physical properties of the ZnO in large number are already known [1,2,3,4,5]. In this article one presents another model unless the Gaussian distribution used by the authors [9] to investigate the experimental reflectivity. Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy observed in the a-plane oriented ZnO in the both polarization, parallel and perpendicular., entitled the inhomogeneous model [21, 22] in the framework of a numerical investigation [23,24,25,26,27], to plot the exciton A, B and C.
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