Abstract
InGaN light-emitting diode (LED) structures get an air-void structure and a tapered GaN structure at the GaN/sapphire interface through a laser decomposition process and a lateral wet etching process. The light output power of the treated LED structure had a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities and peak wavelengths of the micro-photoluminescence spectra were varied periodically by aligning to the air-void (461.8nm) and the tapered GaN (459.5nm) structures. The slightly peak wavelength blueshift phenomenon of the EL and the PL spectra were caused by a partial compressed strain release at the GaN/sapphire interface when forming the tapered GaN structure. The relative internal quantum efficiency of the treated LED structure (70.3%) was slightly increased compared with a conventional LED (67.8%) caused by the reduction of the piezoelectric field in the InGaN active layer.
Highlights
GaN-based light emitting diodes (LEDs) have attracted interest because of their wide applications in a variety of products such as traffic signals, as backlights in liquid crystal displays, and as solid-state white lighting sources [1], etc
a 70% enhancement compared to a conventional LED structure at 20 mA. The intensities
the PL spectra were caused by a partial compressed strain release at the GaN
Summary
GaN-based light emitting diodes (LEDs) have attracted interest because of their wide applications in a variety of products such as traffic signals, as backlights in liquid crystal displays, and as solid-state white lighting sources [1], etc. N-face GaN surfaces at GaN/Al2O3 interfaces [9], embedded rhombus-like air-void structures [10], hexagonal conelike surfaces using laser-lift-off technique [11], and ZnO nanotips prepared by aqueous solution deposition [12] have all been used to increase light-extraction efficiency in InGaN-based LEDs on Al2O3 substrates. A tapered GaN structure and an air-void structure at the GaN/sapphire interface were fabricated in the InGaN-based light-emitting diode (LED) structure through a laser decomposition process, a lateral etching process, and a wet etching process. The laser-decomposed air void structure and the lateral wet etched tapered GaN structure can increase the light extraction efficiency of LED devices. The compressed strain of the InGaN-based LED structure was partially released from the forming of the tapered GaN and the air-void structures at the GaN/sapphire interface. The optical properties of the InGaN LED structures are analyzed in detail
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