Abstract
AbstractInGaN microcrystals were grown by two‐stage growth method for 10 hours in a new reactor without clogging an exhaust tube by fine particles. Obtained InGaN showed double peaked cathodoluminescence spectra, violet peak at 385‐389 nm and blue at 438‐444 nm when excited at 5‐15 kV. The uniformity of the blue emission spectra among the crystals were improved for those grown for the 10‐hour reaction time. The yields of emissive GaN and InGaN crystals were not improved. The compatibility of the position of the violet band of the InGaN crystals to that of the GaN crystals and the resemblance of morphology of the GaN and InGaN crystals imply the growth of InGaN on GaN facets in two‐stage growth. The cause of the deterioration of the CL efficiency of the grown InGaN crystals at a low acceleration voltage was discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
