Abstract
A novel, metamorphic Asymmetric Spacer Tunnel (mASPAT) diode structure was grown by solid source Molecular Beam Epitaxy (MBE) system. A metamorphic HEMT (mHEMT) structure was used to optimize the quality of the grown material. Photoluminescence, X-Ray diffraction and Hall Effect were used to assess the material quality. Following the growth of the mASPAT structure using the optimal growth condition, diodes with different mesa sizes were fabricated and characterised. The I–V characteristics of the fabricated devices show asymmetric behavior as expected. The extracted junction resistance, curvature coefficient and the leakage current at −1V show the potential use of the fabricated mASPAT devices on GaAs as a low-cost and high-volume microwave and millimeter-waves detectors.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
