Abstract
We demonstrate InGaAs dual channel transistors (DCTs) with negative differential resistance (NDR) fabricated on an InP (001) substrate. The dual channel structure consists of high and low mobility InGaAs quantum wells combined with an InAlAs barrier layer. NDR characteristics of the DCTs depend on the thicknesses of the low mobility and barrier layers and the indium content of the high mobility channel. The NDR mechanism is thought to be the carrier transfer from the high mobility channel to the low mobility channel.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
