Abstract
Fourier transform infrared reflectance spectroscopy can be used to establish the height of the transverse optic mode peak of AlAs at 361 cm−1. The peak height is found to be linearly dependent on the aluminum content in Al xGa1– xAs layers on GaAs substrates. Previously published spectra for In xGa1– xAs yielded a similar result for the In content, from the transverse optic mode peak of InAs at 220 cm−1. A quick and nondestructive technique is proposed for the determination of the aluminum and indium mole fraction in these structures.
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