Infrared reflection spectroscopic investigation of adsorption of SiHx(CH3)4−x on Si surfaces

Abstract

AbstractThe absorption process of methylsilanes [SiHx(CH3)4−x(x = 1–3)] onto Si(100) surfaces were investigated by in situ infrared adsorption spectroscopy in the multiple internal reflection geometry. It was established that the exposure of a clean Si(100) (2 × 1) surface to methylsilanes leads to a selective cleavage of SiH bonds. The hydrogen atoms and dissociated species produced in the process adsorb on the dangling bonds of Si dimer, thus forming surface‐adsorbed hydrate species SiH, SiH2, and SiH3. It was demonstrated that adsorption of monomethylsilane occurs in two different modes based on reactions of first and second order. In the adsorption process of the first order, the molecule dissociatively adsorbs on both two dangling bonds of a dimer, while in the adsorption reaction of the second order, the surface adsorbed species SiH(CH3) and a pair of hydrogen atoms are adsorbed independently. © 2002 Wiley Periodicals, Inc. Electron Comm Jpn Pt 2, 85(5): 59–65, 2002; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/ecjb.1108